Lapisan Epitaxial
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200mm 8inch GaN dina sapir Epi-lapisan wafer substrat
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GaN dina Kaca 4-Inci: Pilihan Kaca Disesuaikeun Kaasup JGS1, JGS2, BF33, sareng Kuarsa Biasa
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AlN-on-NPSS Wafer: Lapisan Nitrida Aluminium Berprestasi Tinggi dina Substrat Safir Non-Poles pikeun Aplikasi Suhu Tinggi, Kakuatan Luhur, sareng RF
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Gallium Nitride on Silicon wafer 4inch 6inch Tailored Si Substrat Orientasi, Resistivity, sareng Pilihan N-type/P-type
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Disesuaikeun GaN-on-SiC Epitaxial Wafers (100mm, 150mm) - Sababaraha Pilihan Substrat SiC (4H-N, HPSI, 4H/6H-P)
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GaN-on-Inten Wafers 4inch 6inch Total ketebalan epi (micron) 0.6 ~ 2.5 atawa ngaropéa pikeun Aplikasi Frékuénsi Luhur
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GaAs kakuatan tinggi epitaxial wafer substrat gallium arsenide wafer kakuatan laser panjang gelombang 905nm pikeun perlakuan médis laser
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InGaAs substrat wafer epitaxial PD Array photodetector arrays tiasa dianggo pikeun LiDAR
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2inch 3inch 4inch InP epitaxial wafer substrat APD detektor lampu pikeun komunikasi serat optik atawa LiDAR
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4inci SiC Epi wafer pikeun MOS atanapi SBD
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Silicon-On-Insulator Substrat SOI wafer tilu lapisan pikeun Microelectronics sareng Radio Frékuénsi
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Insulator wafer SOI dina wafer SOI (Silicon-On-Insulator) silikon 8 inci sareng 6 inci