Substrat
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4H-N/6H-N SiC Wafer Reasearch produksi Dummy kelas Dia150mm Silicon carbide substrat
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Silicon-On-Insulator Substrat SOI wafer tilu lapisan pikeun Microelectronics sareng Radio Frékuénsi
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200kg C-pesawat Saphire boule 99,999% 99,999% metode KY monocrystaline
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Insulator wafer SOI dina wafer SOI (Silicon-On-Insulator) silikon 8 inci sareng 6 inci
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99.999% Al2O3 sapir boule monocrystal bahan transparan
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6inch SiC Epitaxiy wafer N / tipe P narima ngaropéa
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Wafer keramik alumina 4inch purity 99% polycrystalline ngagem tahan ketebalan 1mm
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Silicon Dioksida wafer SiO2 wafer kandel digosok, Perdana Jeung Test Kelas
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200mm SiC substrat dummy kelas 4H-N 8inch SiC wafer
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FZ CZ Si wafer di stock 12inch Silicon wafer Perdana atawa Test
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4H-N Dia205mm SiC siki ti Cina P jeung D kelas Monocrystaline
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8inci Silicon wafer P / N-tipe (100) 1-100Ω dummy reclaim substrat