Produk
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SiC keramik tungtung effector handing panangan pikeun wafer carring
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4inch 6inch 8inch SiC Kristal Tumuwuh tungku pikeun Prosés CVD
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6 Inci 4H SEMI Tipe SiC komposit substrat Ketebalan 500μm TTV≤5μm MOS kelas
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Ngaropea Sapphire Optical Windows Sapphire Komponen sareng Precision Polishing
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piring keramik SiC / baki pikeun wadah wafer 4inch 6inch pikeun ICP
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Jandéla Sapphire Bentuk Adat Karasa Luhur pikeun Layar Smartphone
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12 inci SiC Substrat N Tipe Ukuran Besar High Performance RF Aplikasi
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Adat N Tipe SiC Kelor Substrat Dia153 / 155mm Pikeun Power Electronics
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Wafer Thinning Equipment pikeun 4 Inci-12 Inci Safir / SiC / Si Wafer Processing
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12 Inci SiC substrat diaméterna 300mm Kandel 750μm 4H-N Tipe bisa ngaropéa
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Disesuaikeun SiC Siki Kristal Substrat Dia 205/203/208 Tipe 4H-N pikeun Komunikasi Optik
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Custom-Shaped Sapphire Optical Windows Kristal Tunggal Al₂O₃ Wear Resistant Bespoke Dimensions or Shape