Substrat
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Sapphire Wafer Kosong High Purity Raw Sapphire Substrat pikeun Ngolah
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Kristal Biji Sapphire Square - Substrat Berorientasi Precision pikeun Tumuwuh Safir Sintétik
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Silicon Carbide (SiC) Tunggal-Kristal Substrat - 10 × 10mm Wafer
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer pikeun MOS atanapi SBD
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SiC Epitaxial Wafer pikeun Alat Daya - 4H-SiC, N-tipe, Kapadetan Cacat Lemah
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4H-N Tipe SiC Epitaxial Wafer Tegangan High Frékuénsi Luhur
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8inch LNOI (LiNbO3 on Insulator) Wafer pikeun Modulator Optik Waveguides Sirkuit Terpadu
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LNOI Wafer (Lithium Niobate on Insulator) Telekomunikasi Sensing High Electro-Optic
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3 inci High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating Sic Substrat (HPSl)
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4H-N 8 inci SiC substrat wafer Silicon Carbide Dummy Panalungtikan kelas ketebalan 500um
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sapir dia kristal tunggal, karasa luhur morhs 9 scratch-tahan customizable
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Patterned Sapphire Substrat PSS 2inch 4inch 6inch ICP etching garing bisa dipaké pikeun chip LED