Substrat
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8inch 200mm Silicon Carbide SiC Wafers 4H-N tipe Produksi kelas ketebalan 500um
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2Inci 6H-N Silicon Carbide Substrat Sic Wafer Ganda Digosok Conductive Prime Grade Mos Grade
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3 inci High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating Sic Substrat (HPSl)
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safir dia kristal tunggal, karasa luhur morhs 9 scratch-tahan customizable
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Patterned Sapphire Substrat PSS 2inch 4inch 6inch ICP etching garing bisa dipaké pikeun chip LED
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2 inci 4 inci 6 inci Patterned Sapphire Substrat (PSS) dimana bahan GaN tumuwuh tiasa dianggo pikeun lampu LED.
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Au coated wafer，safir wafer，silikon wafer，SiC wafer，2inch 4inch 6inch，Gold coated ketebalan 10nm 50nm 100nm
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wafer silikon plat emas (Si Wafer) 10nm 50nm 100nm 500nm Au Konduktivitas Alus pikeun LED
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Emas Coated Silicon Wafers 2inch 4inch 6inch ketebalan lapisan Emas: 50nm (± 5nm) atawa ngaropéa palapis pilem Au, 99.999% purity
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AlN-on-NPSS Wafer: Lapisan Nitrida Aluminium Berprestasi Tinggi dina Substrat Safir Non-Poles pikeun Aplikasi Suhu Tinggi, Kakuatan Luhur, sareng RF
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AlN on FSS 2inch 4inch NPSS / FSS AlN template pikeun wewengkon semikonduktor
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Gallium Nitride (GaN) Epitaxial Tumuwuh dina Wafer Sapphire 4inch 6inch pikeun MEMS