Substrat
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SiC Substrat SiC Epi-wafer conductive / semi tipe 4 6 8 inci
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SiC Epitaxial Wafer pikeun Alat Daya - 4H-SiC, N-tipe, Kapadetan Cacat Lemah
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4H-N Tipe SiC Epitaxial Wafer Tegangan High Frékuénsi Luhur
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8inch LNOI (LiNbO3 on Insulator) Wafer pikeun Modulator Optik Waveguides Sirkuit Terpadu
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LNOI Wafer (Lithium Niobate on Insulator) Telekomunikasi Sensing High Electro-Optic
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3 inci High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating Sic Substrat (HPSl)
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4H-N 8 inci SiC substrat wafer Silicon Carbide Dummy Panalungtikan kelas ketebalan 500um
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safir dia kristal tunggal, karasa luhur morhs 9 scratch-tahan customizable
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Patterned Sapphire Substrat PSS 2inch 4inch 6inch ICP etching garing bisa dipaké pikeun chip LED
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2 inci 4 inci 6 inci Patterned Sapphire Substrat (PSS) dimana bahan GaN tumuwuh tiasa dianggo pikeun lampu LED.
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4H-N/6H-N SiC Wafer Reasearch produksi Dummy kelas Dia150mm Silicon carbide substrat
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Au coated wafer，safir wafer，silikon wafer，SiC wafer，2inch 4inch 6inch，Gold coated ketebalan 10nm 50nm 100nm