SiC
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12 inci SIC substrat silikon carbide kelas perdana diaméterna 300mm ukuran badag 4H-N Cocog jeung kakuatan tinggi alat dissipation panas
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8 inci SiC silikon carbide wafer 4H-N tipe 0.5mm produksi kelas panalungtikan kelas custom digosok substrat
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HPSI SiC wafer diaméterna: 3 inci ketebalan: 350um± 25 µm pikeun Power Electronics
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3 inci High purity Semi-Insulating （HPSI） SiC wafer 350um Dummy kelas Prime grade
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P-tipe SiC substrat SiC wafer Dia2inch produk anyar
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8inch 200mm Silicon Carbide SiC Wafers 4H-N tipe Produksi kelas ketebalan 500um
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2Inci 6H-N Silicon Carbide Substrat Sic Wafer Ganda Digosok Conductive Prime Grade Mos Grade
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HPSI SiC Wafer ≥90% Transmittance Optical Grade pikeun AI/AR Kacamata
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Semi-Insulating Silicon Carbide (SiC) Substrat High-purity Pikeun Kacamata Ar
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Wafer Epitaxial 4H-SiC pikeun MOSFET Tegangan Ultra-Tinggi (100–500 μm, 6 inci)
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SICOI (Silikon Carbide on Insulator) Wafers SiC Film ON Silicon
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Silicon Carbide (SiC) Tunggal-Kristal Substrat - 10 × 10mm Wafer