Substrat
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Inten-Tambaga komposit Bahan Manajemén Termal
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HPSI SiC Wafer ≥90% Transmittance Optical Grade pikeun AI/AR Kacamata
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Semi-Insulating Silicon Carbide (SiC) Substrat High-purity Pikeun Kacamata Ar
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Wafer Epitaxial 4H-SiC pikeun MOSFET Tegangan Ultra-Tinggi (100–500 μm, 6 inci)
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SICOI (Silikon Carbide on Insulator) Wafers SiC Film ON Silicon
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Sapphire Wafer Kosong High Purity Raw Sapphire Substrat pikeun Ngolah
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Kristal Biji Sapphire Square - Substrat Berorientasi Precision pikeun Tumuwuh Safir Sintétik
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Silicon Carbide (SiC) Tunggal-Kristal Substrat - 10 × 10mm Wafer
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer pikeun MOS atanapi SBD
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SiC Epitaxial Wafer pikeun Alat Daya - 4H-SiC, N-tipe, Kapadetan Cacat Lemah
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4H-N Tipe SiC Epitaxial Wafer Tegangan High Frékuénsi Luhur
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8inch LNOI (LiNbO3 on Insulator) Wafer pikeun Modulator Optik Waveguides Sirkuit Terpadu