SiC

4H-N 8 inci SiC substrat wafer Silicon Carbide Dummy Panalungtikan kelas ketebalan 500um
4H-N/6H-N SiC Wafer Reasearch produksi Dummy kelas Dia150mm Silicon carbide substrat
12 inci SIC substrat silikon carbide kelas perdana diaméterna 300mm ukuran badag 4H-N Cocog jeung kakuatan tinggi alat dissipation panas
8 inci SiC silikon carbide wafer 4H-N tipe 0.5mm produksi kelas panalungtikan kelas custom digosok substrat
HPSI SiC wafer diaméterna: 3 inci ketebalan: 350um± 25 µm pikeun Power Electronics
3 inci High purity Semi-Insulating （HPSI） SiC wafer 350um Dummy kelas Prime grade
P-tipe SiC substrat SiC wafer Dia2inch produk anyar
8inch 200mm Silicon Carbide SiC Wafers 4H-N tipe Produksi kelas ketebalan 500um
2Inci 6H-N Silicon Carbide Substrat Sic Wafer Ganda Digosok Conductive Prime Grade Mos Grade
SiC keramik tungtung effector handing panangan pikeun wafer carring
piring keramik SiC / baki pikeun wadah wafer 4inch 6inch pikeun ICP
3 inci High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating Sic Substrat (HPSl)

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