SiC
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4H-N 8 inci SiC substrat wafer Silicon Carbide Dummy Panalungtikan kelas ketebalan 500um
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4H-N/6H-N SiC Wafer Reasearch produksi Dummy kelas Dia150mm Silicon carbide substrat
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12 inci SIC substrat silikon carbide kelas perdana diaméterna 300mm ukuran badag 4H-N Cocog jeung kakuatan tinggi alat dissipation panas
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HPSI SiC wafer diaméterna: 3 inci ketebalan: 350um± 25 µm pikeun Power Electronics
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8 inci SiC silikon carbide wafer 4H-N tipe 0.5mm produksi kelas panalungtikan kelas custom digosok substrat
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3 inci High purity Semi-Insulating （HPSI） SiC wafer 350um Dummy kelas Prime grade
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P-tipe SiC substrat SiC wafer Dia2inch produk anyar
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8inch 200mm Silicon Carbide SiC Wafers 4H-N tipe Produksi kelas ketebalan 500um
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2Inci 6H-N Silicon Carbide Substrat Sic Wafer Ganda Digosok Conductive Prime Grade Mos Grade
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3 inci High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating Sic Substrat (HPSl)
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Au coated wafer，safir wafer，silikon wafer，SiC wafer，2inch 4inch 6inch，Gold coated ketebalan 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C tipe 2 inci 3 inci 4 inci 6 inci 8 inci