SiC
-
4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer pikeun MOS atanapi SBD
-
SiC Epitaxial Wafer pikeun Alat Daya - 4H-SiC, N-tipe, Kapadetan Cacat Lemah
-
4H-N Tipe SiC Epitaxial Wafer Tegangan High Frékuénsi Luhur
-
3 inci High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating Sic Substrat (HPSl)
-
4H-N 8 inci SiC substrat wafer Silicon Carbide Dummy Panalungtikan kelas ketebalan 500um
-
4H-N/6H-N SiC Wafer Reasearch produksi Dummy kelas Dia150mm Silicon carbide substrat
-
Au coated wafer，safir wafer，silikon wafer，SiC wafer，2inch 4inch 6inch，Gold coated ketebalan 10nm 50nm 100nm
-
SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C tipe 2 inci 3 inci 4 inci 6 inci 8 inci
-
2 inci Sic silikon carbide substrate 6H-N Tipe 0.33mm 0.43mm dua kali sided polishing konduktivitas termal High konsumsi kakuatan low
-
SiC substrat 3inch 350um ketebalan tipe HPSI Prime Kelas Dummy kelas
-
Silicon Carbide SiC Ingot 6inch N tipe Dummy / ketebalan kelas perdana bisa ba ngaropéa
-
6 dina Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Kelas